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 Photocoupler
K101 * K102 * K104
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel. The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package.
FEATURES
* Mini-Flat Package * Collector-Emitter Voltage : Min.50V * Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V) * Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
* Interface between two circuits of different potential * Cordless Phone * Programmable Logic Control * Microcomputer
DIMENSION K101
4 0.2 3
(Unit : mm) K102
8 0.2 7 6 5
4.4
1 Orientation Mark 7.0 3.6 0.2 0.2 0.5
2 Orientation Mark
4.4
1
2
3
4
7.0 0.05 8.7 0.2 0.2 5.2
0.5 0.2
5.2 0.2
0.15
2.5
0.1
2.54 2.54 0.25 0.1
2.54
K104
16 0.2 15 14 13 12 11 10 9
4.4
1 Orientation Mark
2
3
4
5
6
7
8
7.0 18.8 0.2 0.2 5.2
0.5 0.2
2.5
0.1
2.54
2.54
0.1
1/3
0.15
0.05
0.4Min.
0.15
0.05
0.4
0.1
0.4Min.
2.5
0.4Min.
Photocoupler
K101 * K102 * K104
MAXIMUM RATINGS Parameter
Forward Current Input Reverse Voltage Peak Forward Current Power Dissipation
*1
Symbol
IF VR IFP PD BVCEO BVECO IC PC Viso Tstg Topr Tsol Ptot
*2
Rating
50 5 1 70 50 6 50 150 AC3750 -55~+125 -30~+100 260 200
(Ta=25E ) Unit
mA V A mW V V mA mW Vrms E E E mW
Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature Operating Temperature Lead Soldering Temperature Total Power Dissipation
*3
*1. Input current with 100s pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec
ELECTRO-OPTICAL CHARACTERISTICS
Parameter Forward Voltage Input Reverse Current Capacitance Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Current Transfer Ratio
*4
(Ta=25E , unless otherwise noted)
Symbol VF IR CT BVCEO BVECO ICEO CCE CTR VCE(SAT) CIO RIO tr tf Condition IF=10mA VR=5V V=0, f=1MHz IC=0.5mA IE=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz RH=40~60%, V=500V VCE=5V, RL=100 IC=2mA Min. 50 6 50 Typ. 1.15 30 10 0.15 1 10
11
Max. 1.30 10 100 600 0.4 -
Unit. V E pF V V nA pF % V pF U A A
Collector-Emitter Saturation Voltage Coupled Input-Output Capacitance Input-Output Isolation Resistance Rise Time Fall Time
*4. CTR=(IC/IF) X 100 (%)
3 3
2/3
Photocoupler
K101 * K102 * K104
Forward Current vs. Ambient Temperature
50
Collector Power Dissipation vs. Ambient Temperature
Collector Power Dissipation PC (mW)
250 100
Forward Current vs. Forward Voltage
Forward Current IF (mA)
Forward Current IF (mA)
40
200
80
30
150
60 Ta=70E Ta=25E
20
100
40
10 0 -20
50 0 -20
20 Ta=-55E 0.4 0.8 1.2 1.6
0 0 20 40 60 80 100
0
20
40
60
80
100
Ambient Temperature Ta (E )
Ambient Temperature Ta (E )
Forward Voltage VF (V)
Collector Current vs. Collector-Emitter Voltage
Ta=25E 40 IF=30mA 1
Dark Current vs. Ambient Temperature
100
Collector Current vs. Ambient Temperature
Collector Current IC (mA)
IF=20mA 10 IF=10mA IF=5mA
Collector Current IC (mA)
Dark Current ICEO (E )
VCE=24V 0.1
30
IF=20mA
20
IF=10mA
PC(max.)
0.01
1 IF=1mA
10
IF=5mA
IF=1mA 0 2 4 6 8 10
0.001
0
20
40
60
80
100
0 -20
0
20
40
60
80
Collector-Emitter Voltage VCE (V)
Ambient Temperature Ta (E )
Ambient Temperature Ta (E )
Response Time vs. Load Resistance
500 VCE =5V IC=2mA Ta=25E 100 100
Collector Current vs. Forward Current
Ta=25E VCE =5V VIN
Switching Time Test Circuit
VCC R RL VO
Response Time tr, tf (i ) s
Collector Current IC (mA)
10
tr
10
tf
1
Test Circuit
0.1
Input
1
0.01
Output
10%
0.1
0.1
1.0
2.0
0.001 0.1
1
10
100
90%
tr
tf
Load Resistance RL (U )
Forward Current IF (mA)
Wave form
3/3


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