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Photocoupler K101 * K102 * K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel. The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package. FEATURES * Mini-Flat Package * Collector-Emitter Voltage : Min.50V * Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V) * Electrical Isolation Voltage : AC3750Vrms APPLICATIONS * Interface between two circuits of different potential * Cordless Phone * Programmable Logic Control * Microcomputer DIMENSION K101 4 0.2 3 (Unit : mm) K102 8 0.2 7 6 5 4.4 1 Orientation Mark 7.0 3.6 0.2 0.2 0.5 2 Orientation Mark 4.4 1 2 3 4 7.0 0.05 8.7 0.2 0.2 5.2 0.5 0.2 5.2 0.2 0.15 2.5 0.1 2.54 2.54 0.25 0.1 2.54 K104 16 0.2 15 14 13 12 11 10 9 4.4 1 Orientation Mark 2 3 4 5 6 7 8 7.0 18.8 0.2 0.2 5.2 0.5 0.2 2.5 0.1 2.54 2.54 0.1 1/3 0.15 0.05 0.4Min. 0.15 0.05 0.4 0.1 0.4Min. 2.5 0.4Min. Photocoupler K101 * K102 * K104 MAXIMUM RATINGS Parameter Forward Current Input Reverse Voltage Peak Forward Current Power Dissipation *1 Symbol IF VR IFP PD BVCEO BVECO IC PC Viso Tstg Topr Tsol Ptot *2 Rating 50 5 1 70 50 6 50 150 AC3750 -55~+125 -30~+100 260 200 (Ta=25E ) Unit mA V A mW V V mA mW Vrms E E E mW Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Current Collector Power Dissipation Input to Output Isolation Voltage Storage Temperature Operating Temperature Lead Soldering Temperature Total Power Dissipation *3 *1. Input current with 100s pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec ELECTRO-OPTICAL CHARACTERISTICS Parameter Forward Voltage Input Reverse Current Capacitance Collector-Emitter Breakdown Voltage Output Emitter-Collector Breakdown Voltage Collector Dark Current Capacitance Current Transfer Ratio *4 (Ta=25E , unless otherwise noted) Symbol VF IR CT BVCEO BVECO ICEO CCE CTR VCE(SAT) CIO RIO tr tf Condition IF=10mA VR=5V V=0, f=1MHz IC=0.5mA IE=0.1mA IF=0, VCE=24V VCE=0, f=1MHz IF=5mA, VCE=5V IF=5mA, IC=1mA V=0, f=1MHz RH=40~60%, V=500V VCE=5V, RL=100 IC=2mA Min. 50 6 50 Typ. 1.15 30 10 0.15 1 10 11 Max. 1.30 10 100 600 0.4 - Unit. V E pF V V nA pF % V pF U A A Collector-Emitter Saturation Voltage Coupled Input-Output Capacitance Input-Output Isolation Resistance Rise Time Fall Time *4. CTR=(IC/IF) X 100 (%) 3 3 2/3 Photocoupler K101 * K102 * K104 Forward Current vs. Ambient Temperature 50 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation PC (mW) 250 100 Forward Current vs. Forward Voltage Forward Current IF (mA) Forward Current IF (mA) 40 200 80 30 150 60 Ta=70E Ta=25E 20 100 40 10 0 -20 50 0 -20 20 Ta=-55E 0.4 0.8 1.2 1.6 0 0 20 40 60 80 100 0 20 40 60 80 100 Ambient Temperature Ta (E ) Ambient Temperature Ta (E ) Forward Voltage VF (V) Collector Current vs. Collector-Emitter Voltage Ta=25E 40 IF=30mA 1 Dark Current vs. Ambient Temperature 100 Collector Current vs. Ambient Temperature Collector Current IC (mA) IF=20mA 10 IF=10mA IF=5mA Collector Current IC (mA) Dark Current ICEO (E ) VCE=24V 0.1 30 IF=20mA 20 IF=10mA PC(max.) 0.01 1 IF=1mA 10 IF=5mA IF=1mA 0 2 4 6 8 10 0.001 0 20 40 60 80 100 0 -20 0 20 40 60 80 Collector-Emitter Voltage VCE (V) Ambient Temperature Ta (E ) Ambient Temperature Ta (E ) Response Time vs. Load Resistance 500 VCE =5V IC=2mA Ta=25E 100 100 Collector Current vs. Forward Current Ta=25E VCE =5V VIN Switching Time Test Circuit VCC R RL VO Response Time tr, tf (i ) s Collector Current IC (mA) 10 tr 10 tf 1 Test Circuit 0.1 Input 1 0.01 Output 10% 0.1 0.1 1.0 2.0 0.001 0.1 1 10 100 90% tr tf Load Resistance RL (U ) Forward Current IF (mA) Wave form 3/3 |
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